Negative-capacitance field effect transistor

ABSTRACT

Circuit devices and methods of forming the same are provided. In one embodiment, a method includes receiving a workpiece that includes a substrate and a fin extending from the substrate, forming a first ferroelectric layer on the fin, forming a dummy gate structure over a channel region of the fin, forming a gate spacer over sidewalls of the dummy gate structure, forming an inter-level dielectric layer over the workpiece, removing the dummy gate structure to expose the first ferroelectric layer over the channel region of the fin, and forming a gate electrode over the exposed first ferroelectric layer over the channel region of the fin.

PRIORITY DATA

This application is a divisional application of U.S. patent applicationSer. No. 16/596,059, filed Oct. 8, 2019, which claims the benefit ofU.S. Provisional Application No. 62/772,666, filed Nov. 29, 2018, eachof which is incorporated by reference herein in its entirety.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapidgrowth. In the course of IC evolution, functional density (i.e., thenumber of interconnected devices per chip area) has generally increasedwhile geometry size (i.e., the smallest component (or line) that can becreated using a fabrication process) has decreased. This scaling downprocess generally provides benefits by increasing production efficiencyand lowering associated costs. However, such scaling down has also beenaccompanied by increased complexity in design and manufacturing ofdevices incorporating these ICs. Parallel advances in manufacturing haveallowed increasingly complex designs to be fabricated with precision andreliability.

For example, advances in fabrication have enabled three-dimensionaldesigns, such as Fin-like Field Effect Transistors (FinFETs). A FinFETmay be envisioned as a typical planar device extruded out of a substrateand into the gate. An exemplary FinFET is fabricated with a thin “fin”(or fin structure) extending up from a substrate. Source/drain featuresare formed in this vertical fin by doping the fin material or byrecessing the fin material and epitaxially growing the source/drainfeatures in its place.

The remaining portions of the fin may form channel regions between thesource/drain features, and a gate is provided over (e.g., wrappingaround) the channel region of the fin. Wrapping the gate around the finincreases the contact area between the channel region and the gate andallows the gate to control the channel from multiple sides. This can beleveraged in a number of ways, and in some applications, FinFETs providereduced short channel effects, reduced leakage, and higher current flow.In other words, they may be faster, smaller, and more efficient thanplanar devices.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a flowchart of an example method for fabricating asemiconductor device constructed in accordance with some embodiments ofthe present disclosure.

FIG. 2 is a prospective view of a workpiece having fins according tovarious aspects of the present disclosure.

FIGS. 3-18 are cross-sectional views of an example semiconductor devicein accordance with some embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Still further, when a number or a range of numbers is described with“about,” “approximate,” and the like, the term is intended to encompassnumbers that are within a reasonable range including the numberdescribed, such as within +/−10% of the number described or other valuesas understood by person skilled in the art. For example, the term “about5 nm” encompasses the dimension range from 4.5 nm to 5.5 nm.

The present disclosure provides examples of an integrated circuit thatincludes field effect transistors (FET) with gate structures thatincludes more than one ferroelectric layers. Under certain switchingconditions, the ferroelectric behavior of such gate structures produce anegative gate capacitance, and thus the transistors may be referred toNegative Capacitance Field Effect Transistors (NCFETs). Compared toconventional FETs with any ferroelectric layers, NCFETs may have areduced subthreshold swing, a property that relates to the amount ofvoltage used to switch a device on and off and the operating speed ofthe device. In other words, NCFETs may switch faster. NCFETs may alsohave reduced power and a better (e.g., higher) I_(on)/I_(off) currentratio. The present disclosure also provides examples of an integratedcircuit that includes FETs that include a first ferroelectric layerepitaxially formed on the fin active region and a second ferroelectriclayer in physical contact with the gate electrode. The firstferroelectric layer can produce a hysteresis curve to counteract thehysteresis curve of the second ferroelectric layer, thereby achieving ahysteresis-free FET or a substantially hysteresis-free FET.

FIG. 1 is a flow chart of a method 100 for fabricating a semiconductordevice or an integrated circuit (IC) device that includes a plurality oftransistors, such as a plurality of FinFETs. Method 100 will bedescribed in conjunction with diagrammatic perspective view andcross-sectional views of a workpiece 200 shown in FIGS. 2-18. FIGS. 3-7and 17 are cross-sectional views of the workpiece 200 along section A-A′shown in FIG. 2. FIGS. 8-16 and 18 are cross-sectional views of theworkpiece 200 along section B-B′ shown in FIG. 2. Additional steps maybe provided before, during, and after method 100, and some of the stepsdescribed can be moved, replaced, eliminated for additional embodimentsof method 100.

Referring now to FIGS. 1, 2 and 3, method 100 of the present disclosureincludes block 102, where a workpiece 200 is provided. The workpiece 200includes a fin 204 extending from a substrate 202. In FIG. 3, the fin204 extends parallel to a top surface of the substrate 202 along the Xdirection. The substrate 202 represents any structure upon which circuitdevices may be formed. In various examples, the substrate 202 includesan elementary (single element) semiconductor, such as silicon orgermanium in a crystalline structure; a compound semiconductor, such assilicon carbide, gallium arsenic, gallium phosphide, indium phosphide,indium arsenide, and/or indium antimonide; an alloy semiconductor suchas SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; anon-semiconductor material, such as soda-lime glass, fused silica, fusedquartz, and/or calcium fluoride (CaF₂); and/or combinations thereof.

The substrate 202 may be uniform in composition or may include variouslayers, some of which may be selectively etched to form the raisedfeatures, such as fins. The layers may have similar or differentcompositions, and in various embodiments, some substrate layers havenon-uniform compositions to induce device strain and thereby tune deviceperformance. Examples of layered substrates include silicon-on-insulator(SOI) substrates. In some such examples, a layer of the substrate 202may include an insulator such as a semiconductor oxide, a semiconductornitride, a semiconductor oxynitride, a semiconductor carbide, and/orother suitable insulator materials.

Doped regions, such as wells, may be formed on the substrate 202. Inthat regard, some portions of the substrate 202 may be doped with p-typedopants, such as boron, BF₂, or indium while other portions of thesubstrate 202 may be doped with n-type dopants, such as phosphorus orarsenic; and/or other suitable dopants including combinations thereof.

In some examples, the devices to be formed on the substrate 202 extendout of the substrate 202. For example, FinFETs and/or other non-planardevices may be formed on fins (or device fins) 204 disposed on thesubstrate 202. The device fins 204 are representative of any raisedfeature and include FinFET device fins 204 as well as fins 204 forforming other raised active and passive devices upon the substrate 202.The fins 204 may be similar in composition to the substrate 202 or maybe different therefrom. For example, in some embodiments, the substrate202 may include primarily silicon, while the fins 204 include one ormore layers that are primarily germanium or a SiGe semiconductor. Insome embodiments, the substrate 202 includes a SiGe semiconductor, andthe fins 204 include a SiGe semiconductor with a different ratio ofsilicon to germanium than the substrate 202.

The fins 204 may be formed by etching portions of the substrate 202, bydepositing various layers on the substrate 202 and etching the layers,and/or by other suitable techniques. For example, the fins 204 may bepatterned using one or more photolithography processes, includingdouble-patterning or multi-patterning processes. Generally,double-patterning or multi-patterning processes combine photolithographyand self-aligned processes, allowing patterns to be created that have,for example, pitches smaller than what is otherwise obtainable using asingle, direct photolithography process. For example, in one embodiment,a sacrificial layer is formed over the substrate 202. The sacrificiallayer is patterned using a photolithography process. Spacers are formedalongside the patterned sacrificial layer using a self-aligned process.The sacrificial layer is then removed, and the remaining spacers areused to pattern the fins 204 by removing material of the substrate 202that is not covered by the spacers so that the fins 204 remain.

Referring now to FIGS. 1 and 4, method 100 includes block 104 where afirst ferroelectric layer 206 is formed over the fin 204. Because thefirst ferroelectric layer 206 is formed on the fin-side (adjacent thefin 204), the first ferroelectric layer 206 constitutes a part of thechannel. In some embodiments, the first ferroelectric layer 206 includesemiconductor property. In some embodiments, the first ferroelectriclayer 206 is formed of a material that has semiconductor property. Aswill be described below, the second ferroelectric layer (232, FIG. 14)is formed of a ferroelectric material that does not have semiconductorproperty and is therefore different from the first ferroelectric layer206. That is, in embodiments of the present disclosure, materials forthe second ferroelectric layer 232 may not be suitable forming the firstferroelectric layer 206.

The first ferroelectric layer 206 includes compounds including indium(In), selenium (Se), copper (Cu), phosphorous (P), strontium (Sr),titanium (Ti), oxygen (O), chromium (Cr), or sulfur (S). The materialfor the first ferroelectric layer 206 exhibits ferroelectricity and doesnot have a perovskite structure as does the material for the secondferroelectric layer 232 (to be described below). Ferroelectricity is acharacteristic of materials that have a spontaneous electricpolarization that can be reversed by the application of an externalelectric field. A distinguishing feature of a ferroelectric material isthat its polarization is dependent not only on the current electricfield being applied but also on its history, yielding a hysteresis loop.In some embodiments, the material for the first ferroelectric layer 206is oxygen-free and may be categorized as non-oxide ferroelectricmaterial. In some instances, the first ferroelectric layer 206 mayconsist essentially of indium selenide (In₂Se₃) or copper indiumthiophosphate (CuInP₂S₆). In some other instances, the firstferroelectric layer 206 may be other transition metal thiophosphatematerials, such as CuInP₂Se₆, CuCrP₂S₆, or CuCrP₂Se₆. In embodimentsrepresented in FIG. 4, the first ferroelectric layer 206 is formed onthe top surface of the substrate 202, the top surfaces of the fins 204,and the sidewalls of the fins 204.

In some embodiments where the first ferroelectric layer 206 includesindium selenide (In₂Se₃), it may be formed epitaxially by using suitableepitaxy technique, such as vapor-phase epitaxy (VPE), molecular beamepitaxy (MBE), other suitable epitaxy processes, or combinationsthereof. When the material of the first ferroelectric layer 206, on theone hand, and material of the fin 204 and the substrate 202, on theother, have a mismatch, the first ferroelectric layer 206 may be keptthin to prevent substantial lattice defect in the first ferroelectriclayer 206. In alternative embodiments, instead of epitaxially growingthe first ferroelectric layer 206 directly on the substrate 202 and thefin 204, a buffer layer may be formed over the substrate 202 and the fin204 to bridge the lattice constant difference between the firstferroelectric layer 206 and the substrate 202 and the fin 204. That is,the buffer layer, when needed, has a lattice constant between thelattice constant of the material of the substrate 202/fin 204 and thatof the first ferroelectric layer 206.

In some embodiments where the first ferroelectric layer 206 is formed ofa transition metal thiophosphate material, the transition metalthiophosphate material may be formed into a solid and then exfoliated toform flakes to be coated or distributed over the fin 204. In theseembodiments, the transition metal thiophosphate material may be form bysolid state reaction. For example, stoichiometric portion of copper,indium, phosphorous, and sulfur may be placed in a furnace to form asolid of copper indium thiophosphate (CuInP₂S₆) and the solid isexfoliated to form flakes to be coated or deposited on the fin 204. Insome other instances, the first ferroelectric layer 206 may be formed ofa transition metal thiophosphate material and still be formedepitaxially on the fin 204. In still other instances, elements of atransition metal thiophosphate material may be deposited over the fin bysputtering in a stoichiometric ratio and then are solidify in the annealprocess 205 at block 106.

Referring still to FIGS. 1 and 5, method 100 includes block 106 where ananneal process 205 is performed to crystalize or enhance the epitaxialquality of the first ferroelectric layer 206 such that the firstferroelectric layer 206 exhibits ferroelectric property or exhibitsstronger ferroelectric property. In some implementations, the annealprocess 205 may be performed using a suitable anneal technique, such asrapid thermal anneal (RTA) or laser annealing. A temperature of theanneal process 205 depends on the composition of the first ferroelectriclayer 206. In some instances, the temperature of the anneal process 205at block 106 is between about 100° C. and about 700° C. Depending on thecomposition of the first ferroelectric layer 206, the describedtemperature range is needed to transform the material of the firstferroelectric layer 206 into a desirable phase of crystallinity or toremove defect from the first ferroelectric layer 206. The anneal process205 at block 106 is optional and for that reason, block 106 isillustrated using dotted lines.

Referring now to FIGS. 1 and 6, method 100 includes block 108 where anisolation feature 208 is formed over the substrate 202 and among thefins 204. The isolation features 208 may be referred to as shallowtrench isolation (STI) features 208 (or STI 208). The isolation feature208 may include a dielectric material such as a semiconductor oxide, asemiconductor nitride, a semiconductor oxynitride, a semiconductorcarbide, a semiconductor carbonitride, a semiconductor oxycarbonitride,a metal oxide, etc., and in some examples, the isolation feature 208includes multiple sublayers of different dielectric materials. Theisolation feature 208 may be formed by any suitable process, and in someexamples, the isolation feature 208 is deposited using Atomic LayerDeposition (ALD), Plasma Enhanced ALD (PEALD), Chemical Vapor Deposition(CVD), Plasma Enhanced CVD (PECVD), High-Density Plasma CVD (HDP-CVD),and/or other suitable deposition processes. Following deposition, theisolation feature 208 may be etched back so that the uppermost portionsof the fins 204 protrude above the isolation feature 208. In varioussuch examples, the fins 204 extend between about 100 nm and about 500 nmabove the topmost surface of the isolation feature 208. In someembodiments represented in FIG. 6, the isolation feature 208 is formeddirectly on the first ferroelectric layer 206.

Referring now to FIGS. 1, 7 and 8, method 100 includes block 110 where adummy gate structure 209 is formed over a channel region 2000 of the fin204. When materials of the functional gate electrodes (to be describedbelow) are sensitive to fabrication processes or are difficult topattern, dummy gate structures 209 of polysilicon, dielectric, and/orother resilient material may be used during some of the fabricationprocesses. The dummy gate structures 209 are later removed and replacedwith elements of functional gate electrodes (e.g., a gate electrode, agate dielectric layer, an interfacial layer, etc.) in a gate-lastprocess. In this way, the dummy gate structures 209 reserve area for theforthcoming functional gate electrodes.

FIG. 7 is a cross-sectional view of the workpiece 200 along the lengthof the fins 204, which extends along the X-direction. In FIG. 7, thedummy gate structure 209 extends along the Y-direction, which isperpendicular to the length-wise direction (X-direction) of the fins204. FIG. 8 is an enlarged cross-sectional view of the workpiece 200along the length of the dummy gate structure 209, which extends alongthe Y-direction. In FIG. 8, the fins 204 extends along the X-direction.In an example where the fins 204 extend between about 100 nm and about500 nm above the topmost surface of the isolation feature 208, the dummygate structure 209 extends between about 50 nm and about 150 nm from theupper-most surface of the fins 204. In some embodiments represented inFIGS. 7 and 8, the dummy gate structure 209 includes a dummy gateelectrode 210. The dummy gate electrode 210 may include any suitablematerial, such as polysilicon, one or more dielectric materials (e.g., asemiconductor oxide, a semiconductor nitride, a semiconductoroxynitride, a semiconductor carbide, a semiconductor carbonitride, asemiconductor oxycarbonitride, etc.), and/or other suitable material.The material of the dummy gate electrode may be formed by any suitableprocess including CVD, PECVD, HDP-CVD, Physical Vapor Deposition (PVD),ALD, PEALD, and/or other suitable deposition processes. In someexamples, the material of the dummy gate electrode 210 is deposited in ablanket deposition and etched to selectively remove portions of thematerial so that the dummy gate electrode 210 remain over the channelregion 2000 of the fin 204. To aid in patterning, one or more gate hardmask layers of dielectric material or other suitable material, such asfirst gate hard mask 212 and a second gate hard mask 214, may be formedon top of the dummy gate electrode 210 prior to etching. The gate hardmask layers may have similar or different compositions, and in anexample shown in FIGS. 7 and 8, the first gate hard mask layer 212includes a semiconductor nitride, such as silicon nitride, and thesecond gate hard mask layer includes a semiconductor oxide, such assilicon oxide.

In some embodiments, the dummy gate structure 209 may also include adummy gate dielectric layer to interface with the first ferroelectriclayer 206 on the fin 204. To form functional gate electrodes, dummy gatestructure may first be formed over and surrounding channel regions 2000of the fins 204. In those embodiments, the material of the dummy gatedielectric layer is formed over the first ferroelectric layer 206 beforethe material of the dummy gate electrode 210 is deposited and materialof the dummy gate electrode 210 is deposited on the dummy gatedielectric layer. In some instances, the material of the dummy gatedielectric layer may include a semiconductor oxide, such as siliconoxide.

Referring now to FIGS. 1 and 9, method 100 includes block 112 where agate spacer 216 is formed over the dummy gate structure 209. Gatespacers 216 are formed on side surfaces of the dummy gate structure 209,including side surfaces of the dummy gate electrode 210, the first gatehard mask 212, and the second gate hard mask 214. In various examples,the gate spacer 216 includes one or more layers of suitable materials,such as a dielectric material (e.g., a semiconductor oxide, asemiconductor nitride, a semiconductor oxynitride, a semiconductorcarbide, a semiconductor oxycarbonitride, etc.). In some such examples,as those represented in FIG. 9, the gate spacer 216 includes a firstspacer layer 218 of a low-k dielectric material (e.g., SiCN, SiOC,SiOCN, etc.) and a second spacer layer 220 of the same or another low-kdielectric material. In the example, the first spacer layer 218 has athickness between about 1 nm and about 5 nm and the second spacer layer220 has a thickness between about 1 nm and about 5 nm.

The first and second gate spacer layers 218 and 220 may be formed usingany suitable deposition technique (e.g., ALD, CVD, HDP-CVD, etc.). In anexample, the first and second gate spacer layers 218 and 220 aredeposited on the dummy gate structure 209, the first ferroelectric layer206 deposited on the fins 204, and the isolation feature 208 using aconformal deposition technique. The first and second gate spacer layers218 and 220 are then anisotropically/selectively etched to remove themfrom the horizontal surfaces of the first ferroelectric layer 206deposited on the fins 204, the isolation feature 208, and first andsecond gate hard masks 212 and 214 while leaving them on the verticalsurfaces (or sidewalls) of the dummy gate structure 209. The remainingmaterial defines the gate spacer 216. The etching process may beperformed using any suitable etching method, such as anisotropic dryetching, wet etching, Reactive Ion Etching (RIE), and/or other etchingmethods and may use any suitable etchant chemistries. The etchingmethods and the etchant chemistries may vary as the first and secondgate spacer layers 218 and 220 are etched to target the particularmaterial being etched while minimizing unintended etching of thematerials not being targeted.

Referring now to FIGS. 1, 10 and 11, method 100 includes block 114 wheresource/drain features 224 are formed over source/drain regions 2100 ofthe fin 204. Source/drain features 224 are formed on opposing sides ofthe dummy gate structure 209. The source/drain features 224 may beformed by recessing a portion of the fins 204 to form source/drainrecesses 222 and depositing material in the recesses 222 using anepitaxy technique (e.g., Vapor-Phase Epitaxy (VPE) and/or Ultra-HighVacuum CVD (UHV-CVD)), molecular beam epitaxy, and/or other suitableprocesses. The epitaxy process may use gaseous and/or liquid precursors,which interact with a component of the remaining portions of the fins204 (e.g., silicon or silicon-germanium) to form the source/drainfeatures 224. The semiconductor component of the source/drain features224 may be similar to or different from the remainder of the fin 204.For example, Si-containing source/drain features 224 may be formed on aSiGe-containing fin 204 or vice versa. When the source/drain features224 and fins 204 contain more than one semiconductor materials, theratios may be substantially similar or different. In some embodiments, atop surface pf the source/drain feature 224 may be higher than a topsurface of the first ferroelectric layer 206 by between about 2 nm andabout 10 nm.

The source/drain features 224 may be in-situ doped to include p-typedopants, such as boron, BF₂, or indium; n-type dopants, such asphosphorus or arsenic; and/or other suitable dopants includingcombinations thereof. Additionally or in the alternative, thesource/drain features 224 may be doped using an implantation process(i.e., a junction implant process) after the source/drain features 224are formed. With respect to the particular dopant type, the source/drainfeatures 224 are doped to be of opposite type than the remainder of thefins 204. For a p-channel device, the fin 204 is doped with an n-typedopant and the source/drain features 224 are doped with a p-type dopant,and vice versa for an n-channel device. Once the dopant(s) areintroduced into the source/drain features 224, a dopant activationprocess, such as Rapid Thermal Annealing (RTA) and/or a laser annealingprocess, may be performed to activate the dopants.

Referring now to FIGS. 1 and 12, method 100 proceeds to block 116 wherean interlayer (inter-level) dielectric layer (ILD) 226 (or ILD 226) isdeposited over the workpiece 200. The ILD layer 226 acts as an insulatorthat supports and isolates conductive traces of an electricalmulti-level interconnect structure. In turn, the multi-levelinterconnect structure electrically interconnects elements of theworkpiece 200, such as the source/drain features 224 and the functionalgate electrodes. The ILD layer 226 may be formed by any suitable processincluding CVD, PVD, spin-on deposition, and/or other suitable processes.The ILD layer 226 may include a dielectric material (e.g., asemiconductor oxide, a semiconductor nitride, a semiconductoroxynitride, a semiconductor carbide, etc.), Spin-On-Glass (SOG),fluoride-doped silicate glass (FSG), phosphosilicate glass (PSG),borophosphosilicate glass (BPSG), Black Diamond® (Applied Materials ofSanta Clara, Calif.), Xerogel, Aerogel, amorphous fluorinated carbon,parylene, BCB, SiLK® (Dow Chemical of Midland, Mich.), and/orcombinations thereof. A Chemical Mechanical Planarization/Polishing(CMP) process may be performed following the deposition of the ILD layer226 to planarize the ILD layer 226, the gate spacer 216, and the dummygate structure 209. In particular, the CMP process may remove the firstand second gate hard masks 212 and 214 from the top of the dummy gatestructure 209. In some other embodiments, the CMP process does notremove the first and second gate hard masks 212 and 214 from the top ofthe dummy gate structure 209.

Referring now to FIGS. 1 and 13, method 100 includes block 118 where thedummy gate structure 209 is removed. The remaining dummy gate structure209, such as the dummy gate electrode 210 (or any residual gate hardmasks if any is left), is then removed. The dummy gate structure 209 maybe removed using one or more iterations of various etching techniques,such as dry etching, wet etching, RIE, etc., each configured toselectively etch a particular material or set of materials of the dummygate structure 209. Removing the dummy gate structure 209 forms a recess228 between the gate spacers 216 to expose the first ferroelectric layer206 on the channel region 2000 of the fin 204.

Referring now to FIGS. 1 and 14, method 100 includes block 120 where aninterfacial layer 230 is deposited over the first ferroelectric layer206 in the channel region 2000. In some embodiments, the interfaciallayer 230 is formed on the first ferroelectric layer 206 exposed in therecess 228 to promote adhesion between it and the subsequent secondferroelectric layer 232 (to be described further below) and to reducedefects at the interfaces. The interfacial layer 230 may include aninterfacial material, such as a semiconductor oxide, semiconductornitride, semiconductor oxynitride, other semiconductor dielectrics,metal oxides, other suitable interfacial materials, and/or combinationsthereof. The interfacial layer 230 may be formed to any suitablethickness using any suitable process including thermal growth, ALD, CVD,HDP-CVD, PVD, spin-on deposition, and/or other suitable depositionprocesses.

Referring now to FIGS. 1 and 14, method 100 includes block 122 where asecond ferroelectric layer 232 is deposited over the interfacial layer230. In some embodiments represented in FIG. 14, the secondferroelectric layer 232 is formed in the recess 228 between the gatespacers 216 and over the interfacial layer 230. In those embodiments,the second ferroelectric layer 232 is formed on the top and sidessurfaces (sidewalls) of fin(s) 204 in the channel regions 2000. This maybe done without forming the second ferroelectric layer 232 on, forexample, the top of the isolation feature 208 or on the side surfaces(sidewalls) of the gate spacers 216. The second ferroelectric layer 232may include a metal oxide ferroelectric dielectric such as HfO₂, HfYOx,HfSrOx, HfGdOx, HfSiO_(x), HfZrO_(x), HfAlO_(x), BaTiO_(x), Al₂O₃, TiO₂,LaO_(x), BaSrTiO_(x) (BST), PbZr_(x)Ti_(y)O_(z) (PZT), or other metaloxides. Different from the material for the first ferroelectric layer206, the material for the second ferroelectric layer 232 is a metaloxide and has a perovskite structure in order to exhibitferroelectricity. In cases where a ferroelectric material for the secondferroelectric layer 232 shares the same chemical formula with a high-kdielectric material, the ferroelectric material has a perovskitestructure and exhibits ferroelectricity, and the high-k dielectricmaterial counterpart does not. It is also noted that the secondferroelectric layer 232 is different from the first ferroelectric layer206 in that it does not has semiconductor property. The secondferroelectric layer 232 may be formed by implantation, doping,sputtering, PVD, CVD, PECVD, HDP-CVD, and/or other suitable techniquesand may be formed to any suitable thickness. The second ferroelectriclayer 232 is therefore formed using a process different from that forforming the first ferroelectric layer 206.

Referring now to FIGS. 1 and 15, method 100 proceeds to block 124 wherean anneal process 231 is performed. In some embodiments, the annealprocess 231 is performed after depositing the second ferroelectric layer232. The ferroelectric property of the second ferroelectric layer 232may be affected by various factors including, and not limited to, theelements contained, the percentage of the elements, and the phase of theresulting crystal structure. Accordingly, the ferroelectric property ofthe second ferroelectric layer 232 may depend on the deposition processconditions and the post-treatment conditions for forming the secondferroelectric layer 232. Accordingly, even if a material has the sameelements and same percentages of the elements as the secondferroelectric layer 232, this material is not necessarily aferroelectric material. For example, the formation conditions and thesubsequent anneal process can affect whether the ferroelectric propertycan be achieved or not. The anneal process 231 may be any suitableanneal technique, such as Rapid Thermal Annealing (RTA) and/or a laserannealing process and may include an anneal temperature between about100° C. and about 900° C. In some instances, because the anneal process231 is performed after both the first ferroelectric layer 206 the secondferroelectric layer 232 are deposited, the anneal process 231 may beused to thermally treat both the first and second ferroelectric layers206 and 232. In those instances, the anneal process 231 also anneal thefirst ferroelectric layer 206 to impart ferroelectric property in thefirst ferroelectric layer 206 or to enhance ferroelectric property inthe first ferroelectric layer 206 and the anneal process 205 at block106 may be omitted.

In some examples, the material of the second ferroelectric layer 232 hasa higher dielectric constant/relative permittivity (i.e., k) than othersuitable gate dielectrics. In some embodiments, to avoid leakage currentbetween the gate and the channel, the second ferroelectric layer 232 maybe supplemented by additional gate dielectric layers. Such additionalgate dielectric layers may be formed on the interfacial layer 230 andmay extend along the top surface of the isolation feature 208 and theside surface (or sidewall) of the gate spacers 216. The additional gatedielectric layer may include one or more dielectric materials, which arecommonly characterized by their dielectric constant relative to silicondioxide. In some implementations, the additional gate dielectric layerincludes a high-k dielectric material, such as yittrium oxide (Y₂O₃),lanthanum oxide (La₂O₅), gadolinium oxide (Gd₂O₅), titanium oxide(TiO₂), tantalum oxide (Ta₂O₅), erbium oxide (Er₂O₃), zirconium oxide(ZrO), aluminum oxide (Al₂O₃), HfErO, HfLaO, HfYO, HfGdO, HfAlO, HfZrO,HfTiO, HfTaO, or SrTiO, HfO₂, HfSiO, HfSiON, HfTaO, HfTiO, HfZrO,hafnium dioxide-alumina (HfO₂—Al₂O₃) alloy, other suitable high-kdielectric materials, and/or combinations thereof. Additionally or inthe alternative, the additional gate dielectric layer may include otherdielectrics, such as a semiconductor oxide, semiconductor nitride,semiconductor oxynitride, semiconductor carbide, amorphous carbon, TEOS,other suitable dielectric material, and/or combinations thereof. Whilethe chemical formula of some of these materials, such as the exemplaryhigh-k dielectric materials, may be similar to or the same as that ofthe second ferroelectric layer 232, the additional gate dielectric layermay not include a ferroelectric material.

In embodiments where the additional gate dielectric layer is used, theadditional gate dielectric layer may be formed using any suitableprocess including ALD, PEALD, CVD, Plasma Enhanced CVD (PE CVD),HDP-CVD, PVD, spin-on deposition, and/or other suitable depositionprocesses. The additional gate dielectric layer may be formed to anysuitable thickness, and in some examples, the additional gate dielectriclayer has a thickness of between about 0.1 nm and about 3 nm.

Referring now to FIGS. 1, 16 and 17, method 100 includes block 126 wherea gate electrode 234 is deposited over the second ferroelectric layer232. In some embodiments, the gate electrode 234 is formed on the secondferroelectric layer 232 above and between the fins 204. In thoseembodiments, as shown in FIGS. 16 and 17, the gate electrode 234 is incontact with the second ferroelectric layer 232 deposited over sidewallsof the gate spacer 216 and the channel region 2000 of the fin 204. Thegate electrode 234 may include a number of different conductive layers,including capping layers, work function layers, and an electrode fill.For example, forming a gate electrode, such as the gate electrode 234,may include forming one or more capping layers on the secondferroelectric layer 232 to prevent migration of other gate materialsinto the second ferroelectric layer 232. The capping layer(s) mayinclude any suitable conductive material including metals (e.g., W, Al,Ta, Ti, Ni, Cu, Co, etc.), metal nitrides, and/or metal siliconnitrides, and may be deposited via CVD, ALD, PE CVD, PEALD, PVD, and/orother suitable deposition processes. In various embodiments, the cappinglayer(s) include TaSiN, TaN, and/or TiN.

In some examples, forming the gate electrode 234 includes forming one ormore work function layers on the capping layer(s). Suitable workfunction layer materials include n-type and/or p-type work functionmaterials based on the type of circuit device being formed. Exemplaryp-type work function metals include TiN, TaN, Ru, Mo, Al, WN, ZrSi₂,MoSi₂, TaSi₂, NiSi₂, WN, other suitable p-type work function materials,and/or combinations thereof. Exemplary n-type work function metalsinclude Ti, Ag, TaAl, TaAlC, TiAlN, TaC, TaCN, TaSiN, Mn, Zr, othersuitable n-type work function materials, and/or combinations thereof.The work function layer(s) may be deposited by any suitable techniqueincluding ALD, PEALD, CVD, PE CVD, PVD, and/or combinations thereof.Because the p-channel and n-channel devices may have different workfunction layers, in some examples, the p-type work function layers aredeposited in a first deposition process that uses a dielectric hard maskto prevent depositing on the electrodes of the n-channel devices, andthe n-type work function layers are deposited in a second depositionprocess that uses a dielectric hard mask to prevent depositing on theelectrodes of the p-channel devices. In some instances, the electrodefill may be formed of Aluminum (Al), Tungsten (W), Copper (Cu),ruthenium (Ru), cobalt (Co), nickel (Ni), molybdenum (Mo), orcombinations thereof.

Reference is now made to FIG. 18. In some alternative embodiments, thefirst ferroelectric layer 206 not protected by the dummy gate structure209 at block 110 may be optionally removed before the gate spacers 216are formed. In these alternative embodiments, the gate spacers 216 areformed directly on the fin 204 and sidewalls of the first ferroelectriclayer 206 are in contact with the gate spacers 216, such as the firstgate spacer layer 218.

Referring now to FIG. 1, method 100 may include block 128 where furtherprocesses are performed. In various examples, this includes formingcontacts coupling to the source/drain features 224 and to the functionalgate electrode 234, forming a remainder of an electrical interconnectstructure, dicing, packaging, and other fabrication processes.Accordingly, an integrated circuit on the workpiece 200 is provided thatincludes negative-capacitance field effect transistors.

Based on the above discussions, it can be seen that the presentdisclosure offers advantages over conventional methods. It isunderstood, however, that other embodiments may offer additionaladvantages, and not all advantages are necessarily disclosed herein, andthat no particular advantage is required for all embodiments. Oneadvantage is improved device performance. For example, the method of thepresent disclosure forms a transistor with two spaced-apartferroelectric layers between the gate and the channel. A transistorformed using the method of the present disclosure includes a firstferroelectric layer that epitaxially formed on the channel (i.e. channelregion of a fin in a FinFET), a second ferroelectric layer is depositedover an interfacial layer disposed over the first ferroelectric layer,and a gate electrode disposed on the second ferroelectric layer. Becausethe first ferroelectric layer and the second ferroelectric layer arepositioned at different distances from the channel (the channel regionof the fin), the first ferroelectric layer can produce a hysteresiscurve to counteract the hysteresis curve of the second ferroelectriclayer, thereby achieving a hysteresis-free FET or a substantiallyhysteresis-free FET.

The present disclosure provides embodiments of circuit devices andmethods of forming the same. In one embodiment, a method is provided.The method includes receiving a workpiece that includes a substrate anda fin extending from the substrate, the fin including two source/drainregions and a channel region between the two source/drain regions,forming a first ferroelectric layer on the fin, forming a dummy gatestructure over the channel region of the fin, forming a gate spacer oversidewalls of the dummy gate structure, forming an inter-level dielectriclayer over the workpiece, removing the dummy gate structure to exposethe first ferroelectric layer over the channel region of the fin, andforming a gate electrode over the exposed first ferroelectric layer overthe channel region of the fin.

In some embodiments, the forming of the first ferroelectric layerincludes epitaxially growing the first ferroelectric layer on the fin.In some embodiments, the first ferroelectric layer includes indium (In),selenium (Se), copper (Cu), phosphorous (P), strontium (Sr), titanium(Ti), oxygen (O), or sulfur (S), or a combination thereof. In someimplementations, the method further includes forming an interfaciallayer over the exposed first ferroelectric layer over the channelregion, and forming a second ferroelectric layer over the interfaciallayer. The forming of the gate electrode includes forming the gateelectrode on the second ferroelectric layer. In some implementations,the forming of the second ferroelectric layer includes depositing thesecond ferroelectric layer using atomic layer deposition (ALD) orchemical vapor deposition (CVD). In some instances, the secondferroelectric layer is different from the first ferroelectric layer. Insome embodiments, the method of claim further includes forming anisolation feature over the first ferroelectric layer.

In another embodiment, a method is provided. The method includesreceiving a workpiece that includes a substrate and a fin extending fromthe substrate, the fin including two source/drain regions and a channelregion between the two source/drain regions, epitaxially forming a firstferroelectric layer on the fin, forming a dummy gate structure over thechannel region of the fin, forming a gate spacer over sidewalls of thedummy gate structure, forming an inter-level dielectric layer over theworkpiece, removing the dummy gate structure to expose the firstferroelectric layer over the channel region of the fin, forming aninterfacial layer over the exposed first ferroelectric layer over thechannel region, forming a second ferroelectric layer over theinterfacial layer, wherein the second ferroelectric layer is differentfrom the first ferroelectric layer, and forming a gate electrode on thesecond ferroelectric layer.

In some embodiments, the method further includes performing an annealingprocess after the forming the first ferroelectric layer. In someimplementations, the first ferroelectric layer includes indium selenide(In2Se3) or a transition metal thiophosphate. In some embodiments, theforming of the second ferroelectric layer includes depositing the secondferroelectric layer using atomic layer deposition (ALD) or chemicalvapor deposition (CVD). In some implementations, the secondferroelectric layer includes HfO2, HfSiOx, HfZrOx, Al2O3, TiO2, LaOx,BaSrTiOx (BST), or PbZrxTiyOz (PZT). In some instances, the methodfurther includes performing an annealing process after the forming ofthe second ferroelectric layer. In some embodiments, the method furtherincludes forming an isolation feature over the first ferroelectriclayer. In some embodiments, the forming of the first ferroelectric layerincludes epitaxially forming the first ferroelectric layer directly onthe substrate.

In still another embodiment, a circuit device is provided. The circuitdevice includes a substrate, a fin extending from the substrate andhaving a pair of source/drain features and a channel region disposedbetween the pair of source/drain features, a first ferroelectric layeron the channel region of the fin, an isolation feature disposed over thesubstrate and alongside the fin such that the fin extends above theisolation feature, an interfacial layer over the first ferroelectriclayer, a second ferroelectric layer over the interfacial layer, and agate electrode disposed on the second ferroelectric layer.

In some embodiments, the first ferroelectric layer and the secondferroelectric layer are in physical contact with the isolation feature.In some implementations, a portion of the first ferroelectric layer isdisposed on the substrate. In some instances, a portion of the isolationfeature is disposed between the first ferroelectric layer and the secondferroelectric layer. In some embodiments, the first ferroelectric layerincludes indium selenide (In2Se3) or copper indium thiophosphate(CuInP2S6).

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device comprising: a substrate; afin extending from the substrate and having a pair of source/drainfeatures and a channel region disposed between the pair of source/drainfeatures; a first ferroelectric layer on the channel region of the fin;an isolation feature disposed over the substrate and alongside the finsuch that the fin extends above the isolation feature; an interfaciallayer over the first ferroelectric layer; a second ferroelectric layerover the interfacial layer; and a gate electrode disposed on the secondferroelectric layer.
 2. The semiconductor device of claim 1, wherein thefirst ferroelectric layer and the second ferroelectric layer are inphysical contact with the isolation feature.
 3. The semiconductor deviceof claim 1, wherein a portion of the first ferroelectric layer isdisposed on the substrate.
 4. The semiconductor device of claim 1,wherein a portion of the isolation feature is disposed between the firstferroelectric layer and the second ferroelectric layer along a verticaldirection.
 5. The semiconductor device of claim 1, wherein a compositionof the first ferroelectric layer is different from a composition of thesecond ferroelectric layer.
 6. The semiconductor device of claim 1, thefirst ferroelectric layer comprises indium selenide (In₂Se₃) or copperindium thiophosphate (CuInP₂S₆).
 7. The semiconductor device of claim 1,the second ferroelectric layer comprises a metal oxide.
 8. Thesemiconductor device of claim 7, the second ferroelectric layercomprises hafnium oxide, hafnium yttrium oxide, hafnium strontium oxide,hafnium gadolinium oxide, hafnium silicon oxide, hafnium zirconiumoxide, hafnium aluminum oxide, barium titanium oxide, aluminum oxide,titanium oxide, lanthanum oxide, barium strontium titanium oxide, orlead zirconium titanium oxide.
 9. The semiconductor device of claim 1,wherein the gate electrode is spaced apart from the isolation feature bythe first ferroelectric layer.
 10. A device, comprising: a firstsource/drain feature and a second source/drain feature over a substrate;a semiconductor fin extending between the first source/drain feature andthe second source/drain feature; a first ferroelectric layer disposedover the semiconductor fin; a first gate spacer and a second gate spacerdisposed over the first ferroelectric layer; an interfacial layerdisposed between the first gate spacer and the second gate spacer and incontact with the first ferroelectric layer; a second ferroelectric layerdisposed over the interfacial layer; and a gate electrode disposed overthe second ferroelectric layer.
 11. The device of claim 10, wherein thefirst ferroelectric layer extends between the first source/drain featureand the second source/drain feature such that sidewalls of the firstferroelectric layer are in direct contact with the first source/drainfeature and the second source/drain feature.
 12. The device of claim 10,wherein a composition of the first ferroelectric layer is different froma composition of the second ferroelectric layer.
 13. The device of claim12, the first ferroelectric layer comprises indium selenide (In₂Se₃) orcopper indium thiophosphate (CuInP₂S₆).
 14. The device of claim 12, thesecond ferroelectric layer comprises a metal oxide.
 15. The device ofclaim 10, wherein the first gate spacer and the second gate spacerextend along sidewalls of the interfacial layer and the secondferroelectric layer.
 16. A structure, comprising: a semiconductor fin; afirst ferroelectric layer disposed over the semiconductor fin; a firstgate spacer and a second gate spacer disposed over the firstferroelectric layer; an interfacial layer disposed between the firstgate spacer and the second gate spacer and in contact with the firstferroelectric layer; a second ferroelectric layer disposed over theinterfacial layer; and a gate electrode disposed over the secondferroelectric layer, wherein a composition of the first ferroelectriclayer is different from a composition of the second ferroelectric layer.17. The structure of claim 16, the first ferroelectric layer comprisesindium selenide (In₂Se₃) or copper indium thiophosphate (CuInP₂S₆). 18.The structure of claim 16, the second ferroelectric layer comprises ametal oxide.
 19. The structure of claim 18, the second ferroelectriclayer comprises hafnium oxide, hafnium yttrium oxide, hafnium strontiumoxide, hafnium gadolinium oxide, hafnium silicon oxide, hafniumzirconium oxide, hafnium aluminum oxide, barium titanium oxide, aluminumoxide, titanium oxide, lanthanum oxide, barium strontium titanium oxide,or lead zirconium titanium oxide.
 20. The structure of claim 16, whereinthe first gate spacer and the second gate spacer are in direct contactwith the first ferroelectric layer, the interfacial layer, and thesecond ferroelectric layer.